LEDs with efficient electrode structures
US12080832B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Sep 9, 2021 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Dec 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.