Acoustic wave device
US12081190B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2020 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Mar 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/1042
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An acoustic wave device includes a support substrate and first and second resonant sections adjacent to each other on the support substrate. Each of the first and second resonant sections includes a piezoelectric thin film, an IDT electrode on the piezoelectric thin film, and a support layer surrounding the piezoelectric thin film in a plan view of the acoustic wave device. The support layer has a different linear expansion coefficient from the piezoelectric thin film. The piezoelectric thin film in the first resonant section and the piezoelectric thin film in the second resonant section are divided by the support layer between the resonant section and the resonant section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.