Lead-free metallic halide memristor and electronic element comprising the same
US12082514B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2022 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Mar 11, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A lead-free metallic halide memristor is disclosed. The lead-free metallic halide memristor comprises a first electrode layer, an active layer and a second electrode layer, of which the active layer is made of a metallic halide material. Experimental data have proved that the lead-free metallic halide memristor possesses synaptic plasticity because of showing characteristics of short-term potentiation, short-term depression, long-term potentiation, long-term depression during the experiments. Therefore, the lead-free metallic halide memristor has significant potential for being used as an artificial synaptic element so as to be further applied in the manufacture of a reservoir computing chip. Moreover, experimental data have also proved that the lead-free metallic halide memristor also shows the characteristics of multi-level resistive switching, whereupon the lead-free metallic halide memristor can be further used as analog non-volatile memory so as to be further applied in the manufacture of a neuromorphic computing chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.