Magnetorheological-elastomer polishing pad for chemical mechanical polishing of semiconductor wafer, preparation method and application thereof
US12083647B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2024 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Apr 3, 2044 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/24
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Disclosed is a magnetorheological-elastomer (MRE) polishing pad suitable for chemical mechanical polishing (CMP) of a semiconductor wafer, which simultaneously realizes high-efficiency magnetic control polishing and high-efficiency Fenton reaction, forms an organosilicon-polyurethane matrix through an organosilicon-modified polyurethane prepolymer, and combines the characteristics of high flexibility and excellent comprehensive mechanical properties of organosilicon. CIP@Fe3O4 composite magnetic particles in the polishing pad can make the MRE polishing pad exhibit a high magnetorheological effect, and the produced ·OH can oxidize a surface of the semiconductor wafer to generate an oxide layer, reducing the material removal difficulty of abrasive materials and the polishing pad under the mechanical action.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.