Extraordinary IR-absorption in SiO2 thin films with a foreign or attenuating material applied
US12085504B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2018 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Jan 17, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/0686
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An optical element may be fabricated by applying foreign or attenuating material, for example, a copper material or a material that includes copper, to a silicon dioxide thin film to form a layer that exhibits extraordinary optical absorption in the infrared wavelength region of at or about 2500-4700 nanometers. The foreign material may comprise or include a transition metal. The optical element exhibits increased accuracy and sensitivity in the infrared wavelength region of at or about 2500-4700 nanometers. The at or about 2500-4700 nanometers absorption property of the optical element can be selectively tuned to any region within this at or about 2500-4700 nanometers wavelength region. The optical element may comprise multiple layers of varying thicknesses to further tune the optical element to one or more spectral bands. Such an optical element may be utilized in a formation fluid analysis tool or an eye protection device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.