Thin film sensor and method for preparing the same
US12086336B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 24, 2021 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | May 24, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2203/04112
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a thin film sensor and a method for preparing a thin film sensor. The thin film sensor includes: a base substrate; a first conductive mesh on the base substrate; where the first conductive mesh includes first metal wires arranged side by side along a first direction and each extending in a second direction, and second metal wires each extending in a third direction; and the first metal wires intersect with the second metal wires; and a second conductive mesh on a side of the first conductive mesh away from the base substrate; where the second conductive mesh includes first transparent conductive wires arranged side by side along the first direction and each extending in the second direction, and second transparent conductive wires each extending in the third direction; and the first transparent conductive wires intersect with the second transparent conductive wires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.