Methods for improvement of photoresist patterning profile
US12087634B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2023 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Jan 9, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor structure is provided. The method includes forming a gate structure over an active region of a substrate, forming an epitaxial layer comprising first dopants of a first conductivity type over portions of the active region on opposite sides of the gate structure, the epitaxial layer, applying a cleaning solution comprising ozone and deionized water to the epitaxial layer, thereby forming an oxide layer on the epitaxial layer, forming a patterned photoresist layer over the oxide layer and the gate structure to expose a portion of the oxide layer, forming a contact region second dopants of a second conductivity type opposite the first conductivity type in the portion of the epitaxial layer not covered by the patterned photoresist layer, and forming a contact overlying the contact region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.