Patent · US Active

Diffusion soldering with contaminant protection

US12087723B2 · kind B2 · utility

0Cited by

15References

10Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Victor Verdugo · Dresden, DE
Katrin Schmidt · Dresden, DE
Steffen Schmidt · Dresden, DE
Markus Schmitt · Neubiberg, DE

Key dates

Filing date	Feb 17, 2023
Grant date	Sep 10, 2024
Priority date	—
Expiry date	Feb 17, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/8382
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor assembly includes a substrate including a metal die attach surface, a semiconductor die that is arranged on the substrate, the semiconductor die being configured as a power semiconductor device and comprising a semiconductor body, a rear side metallization, and a front side layer stack, the front side layer stack comprising a front side metallization and a contaminant protection layer that is between the front side metallization and the semiconductor body, and a diffusion soldered joint between the metal die attach surface and the rear side metallization, the diffusion soldered joint comprising one or more intermetallic phases throughout the diffusion soldered joint, wherein the contaminant protection layer is configured to prevent transmission of contaminants into the semiconductor body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.