Semiconductor device, method of fabricating the same, and display device including the same
US12087853B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2022 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Mar 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.