Vertical UMOSFET device with high channel mobility and preparation method thereof
US12087855B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2019 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Nov 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application discloses a vertical UMOSFET device with a high channel mobility and a preparation method thereof. The vertical UMOSFET device with a high channel mobility includes an epitaxial structure, and a source, a drain and a gate which match the epitaxial structure, where the epitaxial structure includes a first semiconductor, and a second semiconductor and a third semiconductor which are sequentially disposed on the first semiconductor, a groove structure matching the gate is also disposed in the epitaxial structure, and the groove structure continuously extends into the first semiconductor from a first surface of the epitaxial structure; a fourth semiconductor is also disposed at least between an inner wall of the groove structure and the second semiconductor, and the fourth semiconductor is a high resistivity semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.