Semiconductor device and method for manufacturing the same
US12087857B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2021 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Sep 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The application provides a method for manufacturing a semiconductor device. The method includes the following operations. A semiconductor substrate is provided, a plurality of separate trenches being formed in the semiconductor substrate. Plasma injection is performed to form a barrier layer between adjacent trenches A respective gate structure is formed in each of the plurality of trenches. A plurality of channel regions are formed in the semiconductor substrate, each of the plurality of trenches corresponding to a respective one of the plurality of channel regions. A source/drain region is formed between each of the plurality of trenches and the barrier layer, the source/drain region being electrically connected to the respective one of the plurality of channel regions, and a conductive type of the barrier layer is opposite to a conductive type of the source/drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.