On-chip diplexed multi-band submillimeter-wave/terahertz sources
US12087867B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2020 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Dec 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6688
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A solid-state device chip including diodes (generating a higher or lower frequency output through frequency multiplication or mixing of the input frequency) and a novel on-chip diplexing design that allows combination of two or more multiplier or mixer structures operating at different frequency bands within the 50-5000 GHz range within a same chip and/or waveguide. The on-chip diplexing design consists of a single-substrate multiplier chip with two or more multiplying structures each one containing 2 or more Schottky diodes. The diodes in each structure are tuned to one portion of the target frequency band, resulting in the two or more structures working together as a whole as a large broadband multiplier or mixer. Thus, an increase in bandwidth from 10-15% (current state-of-the-art) to at least 40% is achieved. Depending on the target frequencies, each subset of diodes within the chip can be designed to work either as a doubler or a tripler.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.