Bulk acoustic wave resonator with patterned mass loading layer and recessed frame
US12088278B2 · kind B2 · utility
2Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Mar 31, 2021 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Nov 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/0442
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Aspects of this disclosure relate bulk acoustic wave resonators with a patterned mass loading layer at least contributing to a difference in mass loading between a main acoustically active region of the bulk acoustic wave resonator and a recessed frame region of the bulk acoustic wave resonator. Related methods of manufacturing can involve forming the patterned mass loading layer in the main acoustically active region and the recessed frame region in a common processing step such that the patterned mass loading layer has a higher density in the main acoustically active region than in the recessed frame region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.