Photodetectors with semiconductor active layers for under-display fingerprint and gesture sensors

US12089424B2 · kind B2 · utility

Assignee

• THE REGENTS OF THE UNIVERSITY OF MICHIGAN · US

Inventors

• Lingjie Jay Guo · Ann Arbor, US
• Qingyu Cui · 红钢城街道, CN

Key dates

• Filing date: Jan 16, 2019
• Grant date: Sep 10, 2024
• Expiry date: Apr 28, 2039

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

In various aspects, the present disclosure provides photodetector devices that may be provided in arrays. The photodetector includes a first electrode, a second electrode, and a photoactive layer assembly disposed therebetween. The photoactive layer assembly comprises a first charge transport layer, a second charge transport layer, and an amorphous silicon (a-Si) material substantially free of doping and being substantially free of doping disposed between the first charge transport layer and the second charge transport layer. The photodetector device transmits light in a predetermined range of wavelengths and is capable of generating detectable photocurrent when light having a light intensity of less than or equal to about 50 Lux is directed towards the photodetector device.