Al bonding wire
US12090578B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 12, 2020 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Mar 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/386
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
There is provided an Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The bonding wire is composed of Al or Al alloy, and is characterized in that an average crystal grain size in a cross-section of a core wire in a direction perpendicular to a wire axis of the bonding wire is 0.01 to 50 μm, and when measuring crystal orientations on the cross-section of the core wire in the direction perpendicular to the wire axis of the bonding wire, a crystal orientation <111> angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.