Semiconductor device, and method of forming same
US12093627B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2022 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Nov 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/851
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method (of forming a semiconductor device) includes: forming an active area structure extending in a first direction; forming gate structures over the active area structure and extending in a second direction substantially perpendicular to the first direction; forming contact-source/drain (CSD) conductors over the active area structure, interleaved with corresponding ones of the gate structures, and extending in the second direction; and forming first conductive segments in a first layer of metallization (M_1st layer) over the active area structure and extending in the first direction, the first conductive segments including a first gate-signal-carrying (GSC) conductor which overlaps the active area structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.