Bypass diode interconnect for thin film solar modules
US12094663B2 · kind B2 · utility
0Cited by
4References
21Claims
0Family size
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Key dates
| Filing date | Apr 7, 2022 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Sep 30, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Solar cell interconnect with bypass diodes are described. In an embodiment, a semiconductor-based bypass layer is formed over a top electrode layer of a solar cell and spans over a vertical interconnect providing vertical interconnection between the bottom electrode layer and top electrode layer of serial solar cells. A bypass electrode layer is formed over the semiconductor-based bypass layer and in contact with the top electrode layer for one of the solar cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.