High-transparency semiconductor-metal interfaces
US12094760B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Nov 4, 2020 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Nov 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/128
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques that can facilitate high-transparency semiconductor-metal interfaces are provided. In one example, a method can comprise forming a silicon on insulator (SOI) over a wafer. The method can further comprise depositing a metal on the SOI. The method can further comprise forming a structure by dry-etching the metal and dry-etching the SOI. The method can further comprise forming a template over the structure. The method can further comprise etching a portion of the SOI for removal under the metal. The method can further comprise growing a semiconductor where the portion of SOI was removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.