Techniques and configurations to reduce transistor gate short defects
US12094780B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2023 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Jul 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure describe techniques and configurations to reduce transistor gate short defects. In one embodiment, a method includes forming a plurality of lines, wherein individual lines of the plurality of lines comprise a gate electrode material, depositing an electrically insulative material to fill regions between the individual lines and subsequent to depositing the electrically insulative material, removing a portion of at least one of the individual lines to isolate gate electrode material of a first transistor device from gate electrode material of a second transistor device. Other embodiments may be described and/or claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.