Patent · US Active

Semiconductor device

US12094862B2 · kind B2 · utility

0Cited by
2References
11Claims
0Family size

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Key dates

Filing dateMar 4, 2022
Grant dateSep 17, 2024
Priority date
Expiry dateNov 12, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/181
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

According to one embodiment, a semiconductor device includes: a substrate; a first MOSFET and a second MOSFET that are provided on a first surface of the substrate and have sources commonly coupled; a third MOSFET and a fourth. MOSFET that are provided on the first surface of the substrate and have sources commonly coupled; a light receiver that is provided on the first surface of the substrate and is coupled to the first MOSFET, the second MOSFET, the third MOSFET, and the fourth MOSFET; and a light emitter that is provided on the light receiver.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.