Capacitor in nanosheet
US12094872B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 10, 2021 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Feb 9, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes a substrate. A first nanosheet structure and a second nanosheet structure are disposed on the substrate. Each of the first and second nanosheet structures have at least one nanosheet forming source/drain regions and a gate structure including a conductive gate contact. A first oxide structure is disposed on the substrate between the first and second nanosheet structures. A conductive terminal is disposed in or on the first oxide structure. The conductive terminal, the first oxide structure and the gate structure of the first nanosheet structure define a capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.