Metasurfaces for high-efficient IR photodetectors
US12094899B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | May 28, 2021 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Jun 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/707
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor-based sensor with enhanced light absorption, and in particular, enhanced infrared light absorption includes a semiconductor light sensor element and a patterned spatially inhomogeneous dielectric layer disposed over the semiconductor light sensor element. Characteristically, spatial inhomogeneity of the patterned spatially inhomogeneous dielectric layer is optimized to provide a maximized electric field in the semiconductor light sensor element such light absorption is enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.