Electromagnetic radiation detection structure with optimised absorption and method for forming such a structure
US12094912B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2019 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Nov 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/014
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention concerns an electromagnetic radiation detection structure (10) comprising at least one absorbing element defining an absorption plane, and a MOSFET transistor (100). The transistor comprises: at least one first and at least one second zone (111, 112) of a first type of conductivity; at least one third zone (113) separating the first and second zones (111, 112) from each other; and a gate electrode. The first zone (111), the third zone (113) and the second zone (112) are formed respectively by a first, a third and a second layer that extend in the absorption plane parallel to each other and are arranged one after another in a direction perpendicular to the absorption plane. The gate electrode covers the third zone (113) along at least one lateral wall of said third zone (113).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.