Semiconductor device and method for manufacturing the same
US12094931B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2020 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Sep 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
Abstract
A semiconductor device includes first and second nitride semiconductor layers, a source, a drain, a gate structure, first and second p-type doped nitride semiconductor compound islands. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The source, the drain, and the gate structure are disposed on the second nitride semiconductor layer. The drain viewed in a direction normal to the second nitride semiconductor layer extends longitudinally in an extending direction. The gate structure is between the source and the drain. The first p-type doped nitride semiconductor compound islands are disposed on the second nitride semiconductor layer and arranged adjacent to the drain along the extending direction. The second p-type doped nitride semiconductor compound island is disposed between the gate structure and the second nitride semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.