Method for manufacturing display substrate

US12094954B2 · kind B2 · utility

Assignees

• Ordos Yuansheng G roni Co., Ltd. · CN
• BOE Technology Group Co., Ltd. · CN

Inventors

• Xinguo Wu · Beijing, CN
• Fengguo Wang · Beijing, CN
• Liang Tian · Baoding, CN
• Yu Feng · Beijing, CN
• Bin Liu · Nanhu, CN
• Chenglong Wang · Lo Wu, CN
• Yuxuan MA · Beijing, CN

Key dates

• Filing date: Mar 8, 2021
• Grant date: Sep 17, 2024
• Expiry date: Oct 2, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

A method for manufacturing a display substrate is provided. The method includes: forming a first active layer arranged in the NMOS transistor region and a second active layer arranged in the PMOS transistor region on the base substrate; coating one side, facing away from the base substrate, of the first active layer and one side, facing away from the base substrate, of the second active layer with a first photoresist layer, forming a first pattern layer by patterning the first photoresist layer to expose at least two ends of the first active layer; forming N-type heavily doped regions by performing N-type heavy doping on the two ends of the first active layer with the first pattern layer as a mask; forming a second pattern layer by processing the first pattern layer to expose at least a middle region of the first active layer.