Semiconductor device and method for manufacturing same
US12094968B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 30, 2021 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Aug 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A semiconductor device includes a semiconductor part, first to third electrodes, and a control electrode. The first electrode is provided on a back surface of the semiconductor part. The second electrode is provided at a front surface side of the semiconductor part. The third electrode and the control electrode are provided inside a trench of the semiconductor part. The control electrode includes first and second control portions. The semiconductor device further includes first to third insulating films. The first insulating film is between the control electrode and the semiconductor part. The second insulating film covers the first and second control portions. The third insulating film is between the second electrode and the second insulating film. The third insulating film includes a portion extending between the first and second control portions. The third electrode is between the first electrode and the extension portion of the third insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.