Oxide semiconductor thin film transistor and method of forming the same
US12094978B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2021 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Dec 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
Abstract
An oxide semiconductor thin film transistor and a method of forming the oxide semiconductor thin film transistor are provided. The oxide semiconductor thin film transistor can include a semiconductor layer including a channel region, a source region and a drain region; a first gate insulating layer on the semiconductor layer; a gate electrode on the first gate insulating layer; a second gate insulating layer on the gate electrode; an auxiliary electrode on the second gate insulating layer; an interlayer insulating layer on the auxiliary electrode; and a source electrode and a drain electrode on the interlayer insulating layer, wherein the source region and the drain region being disposed at both sides of the channel region, wherein the gate electrode overlapping with the channel region, and the auxiliary electrode overlapping with the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.