P-type CZT radiation detector for high flux applications

US12094988B1 · kind B1 · utility

Assignee

• REDLEN TECHNOLOGIES, INC. · CA

Inventors

• James Balcom · North Saanich, CA
• Jason MacKenzie · Sisters, US
• Francis Joseph Kumar · Victoria, CA
• Krzysztof INIEWSKI · Coquitlam, CA
• Michael K. Jackson · Richmond, CA
• Yuxin Song · Central Saanich, CA

Key dates

• Filing date: Jun 21, 2022
• Grant date: Sep 17, 2024
• Expiry date: Jul 22, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/1223

Abstract

An ionizing radiation detector includes a p-type semiconductor single crystal substrate having first and second major planar opposing surfaces, where the p-type semiconductor single crystal substrate is doped with n-type dopant atoms, and where a concentration of deep level acceptor defects is greater than a concentration of the n-type dopant atoms in the p-type semiconductor single crystal substrate; a cathode electrode on the first major planar opposing surface of the p-type semiconductor single crystal substrate, and a plurality of anode electrodes on the second major planar opposing surface of the p-type semiconductor single crystal substrate.