Light emitting element, method of manufacturing the same, and display device including the same
US12095008B2 · kind B2 · utility
0Cited by
4References
17Claims
0Family size
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Key dates
| Filing date | Jul 1, 2021 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Feb 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting element includes a first semiconductor layer including a first type of semiconductor, the first semiconductor layer including a 1-1-th semiconductor layer and a 1-2-th semiconductor layer, which are arranged in a length direction of the light emitting element; a second semiconductor layer including a second type of semiconductor different from the first type; an active layer disposed between the 1-2-th semiconductor layer and the second semiconductor layer; and an intermediate layer disposed between the 1-1-th semiconductor layer and the 1-2-th semiconductor layer and having a porous structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.