Light emitting diode and fabrication method thereof

US12095010B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Cheng Meng · Xiamen, CN
• Yuehua JIA · Xiamen, CN
• Jing Wang · Tianjin, CN
• Chun-Yi Wu · New Taipei, TW
• Ching-Shan Tao · Xiamen, CN
• Duxiang WANG · Xiamen, CN

Key dates

• Filing date: Oct 31, 2022
• Grant date: Sep 17, 2024
• Expiry date: Oct 31, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8316

Abstract

A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.