Storage device and data writing method
US12100448B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 18, 2021 |
| Grant date | Sep 24, 2024 |
| Priority date | — |
| Expiry date | Apr 18, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A storage device may be used in a neural network. The storage device includes a memristor unit, a current-controlled circuit, and a write circuit. The memristor unit has a structure of one-transistor and one-resistive random access memory (1T1R). The current-controlled circuit is configured to limit a current passing through the memristor unit to a target current, where the target current is determined based on target conductance of the memristor unit and a gate voltage of the transistor, and the target conductance is used to indicate target data to be written into the memristor unit. The write circuit is configured to load a write voltage to the memristor unit in cooperation with the current-controlled circuit, to write the target data to the memristor unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.