Bulk acoustic wave device with raised frame structure
US12101077B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2021 |
| Grant date | Sep 24, 2024 |
| Priority date | — |
| Expiry date | May 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/7209
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Aspects of this disclosure relate to a bulk acoustic wave device with a multi-layer raised frame. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-layer raised frame structure configured to cause lateral energy leakage from a main acoustically active region of the bulk acoustic wave device to be reduced. The multi-layer raised frame structure includes a first raised frame layer embedded in the piezoelectric layer and a second raised frame layer. The first raised frame layer has a lower acoustic impedance than the piezoelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.