Quantum dot light-emitting diode and method for fabricating the same
US12101953B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2019 |
| Grant date | Sep 24, 2024 |
| Priority date | — |
| Expiry date | Jan 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
Abstract
The present application discloses a first aspect provides a quantum dot light-emitting diode, including: a cathode and an anode which are oppositely arranged; a quantum dot light-emitting layer arranged between the cathode and the anode; and a stacked layer arranged between the cathode and the quantum dot light-emitting layer. A stacked layer includes: a first metal oxide nanoparticle layer, and a mixed material layer arranged on a surface of the first metal oxide nanoparticle layer far away from the quantum dot light-emitting layer. The mixed material layer includes: first metal oxide nanoparticles, and a second metal oxide dispersed among gaps of the first metal oxide nanoparticles. First metal oxide nanoparticles in the first metal oxide nanoparticle layer serve as an electron transport material. A content of the second metal oxide in the mixed material layer gradually increases in a direction from the quantum dot light-emitting layer to the cathode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.