Compound, thin-film forming raw material that contains said compound, and method of manufacturing thin film
US12104245B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Oct 19, 2020 |
| Grant date | Oct 1, 2024 |
| Priority date | — |
| Expiry date | Apr 10, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/285
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Provided is a thin-film forming raw material containing a compound represented by the following formula (1): in the formula (1), R1 to R5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that at least one of R2, R3, and R4 represents the group containing a fluorine atom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.