Bismuth-doped bismuth phosphate photoelectrode modified by titanium carbide and preparation method
US12104261B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2021 |
| Grant date | Oct 1, 2024 |
| Priority date | — |
| Expiry date | Nov 29, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25B11/091
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A bismuth-doped bismuth phosphate photoelectrode modified by titanium carbide and a preparation method are provided. A first chitosan coating and a second chitosan coating both show electropositivity, and a two-dimensional Ti3C2 coating shows electronegativity, wherein the bismuth-doped bismuth phosphate photoelectrode modified by two-dimensional Ti3C2 is prepared by an electrostatic self-assembly method. The method is efficient, environment friendly and has simple operation steps; no precious metals are doped in reactions, and no pollutants are produced in reaction processes to meet a requirement of environmental protection; and the method has positive significance for putting the bismuth-doped bismuth phosphate photoelectrode modified by the titanium carbide into actual production. The bismuth-doped bismuth phosphate photoelectrode enhances synergistic effect of electrons and delays recombination time of photo-induced electrons and hole pairs. A photocurrent response value of the bismuth-doped bismuth phosphate photoelectrode is about 410 times a photocurrent response value of a pure bismuth-doped bismuth phosphate photoelectrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.