Nonpolar or semipolar group III-nitride substrates
US12106959B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2020 |
| Grant date | Oct 1, 2024 |
| Priority date | — |
| Expiry date | Apr 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aspects of the disclosure provide for mechanisms for producing group III-nitride substrates. In accordance with some embodiments, a method for producing a group III-nitride substrate is provided. The method may include: providing a growth template comprising a semiconductor layer of a group III-nitride material with a nonpolar orientation or a semipolar orientation; fabricating a mask on the semiconductor layer for preventing defects in the growth template from propagating into group III-nitride materials grown on the growth template; and forming, on the mask, an epitaxial layer of the group III-nitride with the nonpolar orientation or semipolar orientation. The mask may include a stripe pattern comprising SiO2 and/or SiN. Forming the epitaxial layer of the group III-nitride material may include growing the group III-nitride material in the semipolar orientation or the nonpolar orientation in nitrogen carrier gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.