Process monitoring method and process monitoring system
US12107021B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2021 |
| Grant date | Oct 1, 2024 |
| Priority date | — |
| Expiry date | Apr 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present application provide a process monitoring method and a process monitoring system. The process monitoring method includes: acquiring a semiconductor structure on which an etch process is performed in an etch chamber, and forming a corresponding test structure based on the semiconductor structure; acquiring first theoretical mass of the test structure after the etch process is theoretically performed; placing the test structure in the etch chamber to actually perform the etch process, and acquiring first residual mass of the test structure after the etch process is actually performed; and determining, based on the first theoretical mass and the first residual mass, whether an etch state of the etch process performed in the etch chamber is normal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.