Redistribution layer structure and manufacturing method thereof
US12107036B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Nov 22, 2021 |
| Grant date | Oct 1, 2024 |
| Priority date | — |
| Expiry date | Dec 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68359
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A redistribution layer structure and the manufacturing method thereof are provided. The redistribution layer structure includes a first metal layer, a first dielectric layer, a second metal layer, and a second dielectric layer. The first dielectric layer is disposed on the first metal layer. The second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the second metal layer. A chemical resistance of the first dielectric layer is greater than a chemical resistance of the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.