Semiconductor devices and methods of manufacturing electronic devices
US12107037B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2021 |
| Grant date | Oct 1, 2024 |
| Priority date | — |
| Expiry date | Sep 15, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one example, a semiconductor device comprises a substrate comprising a top side and a bottom side, a dielectric structure, and a conductive structure, wherein the conductive structure comprises a first terminal exposed from the dielectric structure, an electronic component over the top side of the substrate, and an encapsulant over the top side of the substrate and covering a lateral side of the electronic component. The dielectric structure comprises a first pattern base and first pattern wall that extends from the first pattern base and is adjacent to the first terminal, and the first terminal is bounded by the first pattern wall. Other examples and related methods are also disclosed herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.