Patent · US Active

Semiconductor device

US12107159B2 · kind B2 · utility

0Cited by
2References
18Claims
0Family size

Assignees

Inventors

Key dates

Filing dateAug 6, 2021
Grant dateOct 1, 2024
Priority date
Expiry dateJun 9, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/2527

Abstract

According to one embodiment, a semiconductor device includes first to third electrodes, a conductive member, a semiconductor member, and an insulating member. The conductive member includes a conductive member end portion and a conductive member other-end portion. The conductive member end portion is between the first electrode and the conductive member other-end portion. The conductive member is electrically connected with one of the second electrode or the third electrode. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first and second partial regions. The first partial region is between the first and second electrodes. The second semiconductor region is between the first partial region and the third semiconductor region. The third semiconductor region is electrically connected with the second electrode. A portion of the insulating member is between the semiconductor member and the third electrode and between the semiconductor member and the conductive member.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.