High-threshold power semiconductor device and manufacturing method thereof

US12107167B2 · kind B2 · utility

Assignee

• SOUTHEAST UNIVERSITY · CN

Inventors

• Siyang Liu · Tangxia, CN
• Weifeng Sun · 安丰镇, CN
• Chi Zhang · Kunshan, CN
• Shuxuan Xin · Nanjing, CN
• Shen Li · Roseville, US
• Le Qian · Nanjing, CN
• Chen Ge · Shanghai, CN
• Longxing Shi · Nanjing, CN

Key dates

• Filing date: Jan 20, 2021
• Grant date: Oct 1, 2024
• Expiry date: Mar 12, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62

Abstract

The present invention discloses a high-threshold power semiconductor device and a manufacturing method thereof. The high-threshold power semiconductor device includes, in sequence from bottom to top: a metal drain electrode, a substrate, a buffer layer, and a drift region; further including: a composite column body which is jointly formed by a drift region protrusion, a columnar p-region and a columnar n-region on the drift region, a channel layer, a passivation layer, a dielectric layer, a heavily doped semiconductor layer, a metal gate electrode and a source metal electrode. The composite column body is formed by sequentially depositing a p-type semiconductor layer and an n-type semiconductor layer on the drift region and then etching same. The channel layer and the passivation layer are formed in sequence by deposition. Thus, the above devices are divided into a cell region and a terminal region. The dielectric layer, the heavily doped semiconductor layer, the metal gate electrode and the source metal electrode only exist in the cell region, and the passivation layer of the terminal region extends upwards and is wrapped outside the channel layer. This structure can increase a th…