Semiconductor LED and method of manufacturing the same
US12107186B2 · kind B2 · utility
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9References
20Claims
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Key dates
| Filing date | May 23, 2023 |
| Grant date | Oct 1, 2024 |
| Priority date | — |
| Expiry date | May 23, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting diode (LED) and a method of manufacturing the same are provided. The LED includes a first semiconductor layer; a plurality of active elements spaced apart on the first semiconductor layer and each having a width less than a width of the first semiconductor layer; and a second semiconductor layer disposed on the plurality of active elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.