Laser processing method for thin film structures
US12109651B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2019 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Feb 7, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of processing a thin film structure comprising: providing a thin film structure comprising a stack of two or more thin film layers supported on a surface of a substrate, the stack having a depth orthogonal to the substrate surface; and forming a cut through the depth of the stack by using a direct write laser technique to scan a laser beam along a scan path covering an area of a desired cut line on a surface of the stack to ablate material of the stack along the cut line and through the depth of the stack at least to the surface of the substrate; wherein the direct write laser technique is implemented using an ultrashort pulsed laser outputting pulses with a duration of 1000 femtoseconds or less, at a wavelength in the range of 100 to 1500 nm, and delivering a fluence in the range of 50 to 100,000 mJ/cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.