Method of inspecting a wafer and apparatus for performing the same
US12111270B2 · kind B2 · utility
0Cited by
10References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 21, 2022 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | May 26, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/127
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of inspecting a wafer comprising measuring an intensity of an incident light and storing the measurement as stored incident light intensity, irradiating the incident light to the wafer, measuring an intensity of a reflected light from the wafer and storing the measurement as stored reflected light intensity, and correcting the stored reflected light intensity based on a difference between the stored incident light intensity and a reference intensity of a reference incident light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.