Power semiconductor module having a pressure device acting on a switching device

US12112994B2 · kind B2 · utility

Assignee

• SEMIKRON DANFOSS ELEKTRONIK GMBH & CO. KG · DE

Inventors

• Stefan OEHLING · Uttenreuth, DE
• Matthias Hager · Langenzenn, DE
• Verena Gulitsch · Neuhaus a.d.Pegnitz, DE
• Harald Kobolla · Seukendorf, DE

Key dates

• Filing date: Oct 27, 2023
• Grant date: Oct 8, 2024
• Expiry date: Oct 27, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2023/4087
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor module has a base plate with a housing and a switching device. The switching device has a substrate and a connecting device with a first and a second main face. A group of power semiconductor components is arranged on a conductor track of the substrate, and has a group midpoint. A pressure device is formed on the substrate in the normal direction to exert pressure, which pressure device has a pressure body and a pressure inducing body, wherein a pressure element is arranged protruding from the pressure body, wherein the pressure element presses onto a pressure section of the second main face of the connecting device, and wherein the pressure inducing body has a pressure transmission section with a pressure transmission point.