Fringe capacitor, integrated circuit and manufacturing process for the fringe capacitor
US12113062B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2020 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Feb 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K3/0377
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a capacitor having a first structure made of a metal layer and a second structure made of the same metal layer and a dielectric layer between the first and the second metal structure, wherein the dielectric layer has a relative permittivity greater than 4, in particular greater than 6. It also provides a monolithically integrated circuit including such a capacitor and optionally other components. A method of manufacturing such a capacitor is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.