LDMOS with self-aligned body and hybrid source

US12113106B2 · kind B2 · utility

Assignees

• Amplexia, LLC · US
• X-FAB Global Services GmbH · DE

Inventors

• Brendan Toner · Sebauh, MY
• Zhengchao Liu · Kuching, MY
• Gary M. Dolny · Smethport, US
• William R. Richards · Cary, US
• Manoj Chandrika Reghunathan · Kuching, MY
• Stefan Eisenbrandt · Erfurt, DE
• Christoph Ellmers · Dresden, DE

Key dates

• Filing date: Nov 2, 2022
• Grant date: Oct 8, 2024
• Expiry date: Dec 22, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Devices and methods for providing a power transistor structure with a shallow source region include implanting a dopant of a first dopant polarity into a drift region on a source side of a gate structure to form a body region, the body region being self-aligned to, and extending under, the gate structure, and producing a shallow body region wherein the source side hybrid contact mitigates punch through of the shallow self-aligned body region and suppresses triggering of a parasitic bipolar. A retrograde body well, of the first dopant polarity, may be disposed beneath, and noncontiguous with, the shallow self-aligned body region, wherein the retrograde body well improves the electric field profile of the shallow self-aligned body region. A variety of power transistor structures are produced from such devices and methods.