Dual emission LED chip
US12113159B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2019 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Jun 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Proposed is a dual emission LED chip that emits light to the upper and lower sides of a PN junction, wherein the duel emission LED chip uses the electroluminescent effect of the PN junction including a P layer and an N layer provided below the P layer, and characterized in that the dual emission LED chip emits light in the upward direction of the P layer and the downward direction of the N layer. The dual emission chip can be applied as a single chip to a field requiring dual emission, thereby enabling miniaturization of applied equipment, and increases power efficiency, thereby reducing manufacturing costs. In addition, as the dual emission LED chip can be manufactured through a batch process, a separate packaging process is not required.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.