Fabrication method of a memory and the memory
US12114482B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2021 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Jan 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments provide a memory and a fabrication method thereof, and relates to the field of storage device technology to solve the technical problem of lower storage density of the memory. The fabrication method of the memory includes: providing a substrate including a central region and an edge region connected to each other, a first contact structure electrically connected to a wordline structure in the substrate being formed in the edge region; forming a second contact structure electrically connected to the first contact structure on the edge region; forming a capacitor structure electrically connected to the wordline structure on the central region; forming a third contact structure electrically connected to the second contact structure on the second contact structure; and forming a transistor structure electrically connected to the wordline structure on the capacitor structure and the third contact structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.