Thin film transistors comprising carbon nanotube networks encapsulated by a polymeric layer and methods for the manufacture thereof
US12114515B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2019 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Mar 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present application relates to thin film transistors having a semiconducting channel comprising a network of carbon nanotubes that are electrically coupled to a source electrode and a drain electrode and electrically insulated from, but capacitively coupled to, a gate electrode, wherein a polymeric layer encapsulates the carbon nanotubes. The polymeric layer can comprise a first monomeric unit and optionally a second monomeric unit, wherein the first monomeric unit, the second monomeric unit and the relative amounts thereof are optionally selected to provide at least one target electrical property of the thin film transistor. The present application also relates to methods for manufacturing such thin film transistors as well as a methods of selecting a polymeric layer to provide a desired threshold voltage for such thin film transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.